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FQD5N30TM MOSFET Transistor

The FQD5N30TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD5N30TM transistor as follows.

Circuit diagram symbol of the FQD5N30TM transistor

FQD5N30TM Transistor Specification

Transistor Code FQD5N30TM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.9Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 70pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 55nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 9.8nC

UXPython is not the creator or an official representative of the FQD5N30TM MOSFET transistor. You can download the official FQD5N30TM MOSFET transistor datasheet to get more infromation about this transistor.

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