The FQD5N30TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the FQD5N30TM transistor as follows.
Transistor Code | FQD5N30TM | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | N-Channel | |
Package | D-PAK | |
Drain-Source Voltage (Maximum) | VDS | 300V |
Gate-Source Voltage (Maximum) | VGS | 30V |
Drain Current (Maximum) | ID | 4.4A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.9Ohm |
Power Dissipation (Maximum) | PD | 45W |
Drain-Source Capacitance | 70pF | |
Operating Junction Temperature (Maximum) | 150°C | |
Rise Time | 55nS | |
Gate-Threshold Voltage (Maximum) | 5V | |
Total Gate Charge | 9.8nC |
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