FDW262P MOSFET Transistor

The FDW262P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDW262P transistor as follows.

FDW262P Transistor Specification

Transistor Code		FDW262P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Transistor SMD Code		262P
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.047Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		193pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		1.5V

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