IRF7726PBF MOSFET Transistor

The IRF7726PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRF7726PBF transistor as follows.

IRF7726PBF Transistor Specification

Transistor Code		IRF7726PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	1.79W
Drain-Source Capacitance		341pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		46nC

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