PDNM8TP20V6E MOSFET Transistor

The PDNM8TP20V6E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PDNM8TP20V6E transistor as follows.

PDNM8TP20V6E Transistor Specification

Transistor Code		PDNM8TP20V6E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		210nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		18nC

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