FDG6301N_F085 MOSFET Transistor

The FDG6301N_F085 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDG6301N_F085 transistor as follows.

FDG6301N_F085 Transistor Specification

Transistor Code		FDG6301N_F085
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC70
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	0.3W
Operating Junction Temperature (Maximum)		150°C

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