FDG6332C MOSFET Transistor

The FDG6332C is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDG6332C transistor as follows.

FDG6332C Transistor Specification

Transistor Code		FDG6332C
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SC70
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	0.3W
Operating Junction Temperature (Maximum)		150°C

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