FDG6322C MOSFET Transistor

The FDG6322C is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDG6322C transistor as follows.

FDG6322C Transistor Specification

Transistor Code		FDG6322C
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SC70
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	0.3W
Operating Junction Temperature (Maximum)		150°C

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