P2610BD MOSFET Transistor

The P2610BD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P2610BD transistor as follows.

P2610BD Transistor Specification

Transistor Code		P2610BD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0268Ohm
Power Dissipation (Maximum)	PD	78W
Drain-Source Capacitance		139pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		42nS

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