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DMG6402LDM MOSFET Transistor

The DMG6402LDM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMG6402LDM transistor as follows.

Circuit diagram symbol of the DMG6402LDM transistor

DMG6402LDM Transistor Specification

Transistor Code DMG6402LDM
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT26
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.042Ohm
Power Dissipation (Maximum) PD 1.1W
Drain-Source Capacitance 386pF

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