AP2626GY MOSFET Transistor

The AP2626GY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2626GY transistor as follows.

AP2626GY Transistor Specification

Transistor Code		AP2626GY
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT26
Transistor SMD Code		YCSS
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.072Ohm
Power Dissipation (Maximum)	PD	1.2W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.1nS
Gate-Threshold Voltage (Maximum)		3V

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