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AP2626GY MOSFET Transistor

The AP2626GY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2626GY transistor as follows.

Circuit diagram symbol of the AP2626GY transistor

AP2626GY Transistor Specification

Transistor Code AP2626GY
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT26
Transistor SMD Code YCSS
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.072Ohm
Power Dissipation (Maximum) PD 1.2W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10.1nS
Gate-Threshold Voltage (Maximum) 3V

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