CSD87312Q3E MOSFET Transistor

The CSD87312Q3E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD87312Q3E transistor as follows.

CSD87312Q3E Transistor Specification

Transistor Code		CSD87312Q3E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON3.3X3.3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		1.3V
Total Gate Charge		6.3nC

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