CSD86330Q3D MOSFET Transistor

The CSD86330Q3D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD86330Q3D transistor as follows.

CSD86330Q3D Transistor Specification

Transistor Code		CSD86330Q3D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON3.3X3.3
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0088Ohm
Power Dissipation (Maximum)	PD	6W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.5nS
Gate-Threshold Voltage (Maximum)		1.4V
Total Gate Charge		4.8nC

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