CSD25404Q3 MOSFET Transistor

The CSD25404Q3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD25404Q3 transistor as follows.

CSD25404Q3 Transistor Specification

Transistor Code		CSD25404Q3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SON3.3X3.3
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	2.8W
Drain-Source Capacitance		902pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		1.15V
Total Gate Charge		10.8nC

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