CED02N7G MOSFET Transistor

The CED02N7G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CED02N7G transistor as follows.

CED02N7G Transistor Specification

Transistor Code		CED02N7G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	700V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6.75Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		55pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12.5nS

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