AP10P10GJ MOSFET Transistor

The AP10P10GJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP10P10GJ transistor as follows.

AP10P10GJ Transistor Specification

Transistor Code		AP10P10GJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Transistor SMD Code		10P10GJ
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	32.5W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		3V

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