AP60N03GJ MOSFET Transistor

The AP60N03GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP60N03GJ transistor as follows.

AP60N03GJ Transistor Specification

Transistor Code		AP60N03GJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0135Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		440pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		81nS

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