BRD3N80 MOSFET Transistor

The BRD3N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BRD3N80 transistor as follows.

BRD3N80 Transistor Specification

Transistor Code		BRD3N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.8Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS

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