AP6677GH MOSFET Transistor

The AP6677GH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6677GH transistor as follows.

AP6677GH Transistor Specification

Transistor Code		AP6677GH
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0123Ohm
Power Dissipation (Maximum)	PD	69W
Drain-Source Capacitance		560pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Total Gate Charge		44nC

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