IRLR8503PBF MOSFET Transistor

The IRLR8503PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR8503PBF transistor as follows.

IRLR8503PBF Transistor Specification

Transistor Code		IRLR8503PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	62W
Drain-Source Capacitance		650pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10*nS
Gate-Threshold Voltage (Maximum)		1V

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