BF966S MOSFET Transistor

The BF966S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BF966S transistor as follows.

BF966S Transistor Specification

Transistor Code		BF966S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MACROX
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8.5V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	200Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		2.6pF
Operating Junction Temperature (Maximum)		150°C

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