BF960S MOSFET Transistor

The BF960S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BF960S transistor as follows.

BF960S Transistor Specification

Transistor Code		BF960S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MACROX
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8.5V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	200Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		0.8pF
Operating Junction Temperature (Maximum)		150°C

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