BF900 MOSFET Transistor

The BF900 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BF900 transistor as follows.

BF900 Transistor Specification

Transistor Code		BF900
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MACROX
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	100Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		4pF
Operating Junction Temperature (Maximum)		150°C

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