AP9T18GEJ MOSFET Transistor

The AP9T18GEJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9T18GEJ transistor as follows.

AP9T18GEJ Transistor Specification

Transistor Code		AP9T18GEJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	31W
Drain-Source Capacitance		205pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		84nS

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