AP85T03GJ MOSFET Transistor

The AP85T03GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP85T03GJ transistor as follows.

AP85T03GJ Transistor Specification

Transistor Code		AP85T03GJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	107W
Drain-Source Capacitance		550pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		77nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		33nC

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