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IRFUC20PBF MOSFET Transistor

The IRFUC20PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFUC20PBF transistor as follows.

Circuit diagram symbol of the IRFUC20PBF transistor

IRFUC20PBF Transistor Specification

Transistor Code IRFUC20PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.4Ohm
Power Dissipation (Maximum) PD 42W
Drain-Source Capacitance 48pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 23nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 18nC

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