AP3P050M MOSFET Transistor

The AP3P050M is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3P050M transistor as follows.

AP3P050M Transistor Specification

Transistor Code		AP3P050M
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		90pF
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		3V

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