AOSP21307 MOSFET Transistor

The AOSP21307 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AOSP21307 transistor as follows.

AOSP21307 Transistor Specification

Transistor Code		AOSP21307
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0115Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		300pF
Rise Time		13.3nS
Gate-Threshold Voltage (Maximum)		2.3V

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