ZXM66P02N8 MOSFET Transistor

The ZXM66P02N8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXM66P02N8 transistor as follows.

ZXM66P02N8 Transistor Specification

Transistor Code		ZXM66P02N8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	1.56W
Drain-Source Capacitance		2068pF
Total Gate Charge		43.3nC

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