P0403BDG MOSFET Transistor

The P0403BDG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P0403BDG transistor as follows.

P0403BDG Transistor Specification

Transistor Code		P0403BDG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	84A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	51W
Drain-Source Capacitance		846pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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