IRLR8259PBF MOSFET Transistor

The IRLR8259PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR8259PBF transistor as follows.

IRLR8259PBF Transistor Specification

Transistor Code		IRLR8259PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	57A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0087Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		2.35V

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