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AP2530GY MOSFET Transistor

The AP2530GY is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2530GY transistor as follows.

Circuit diagram symbol of the AP2530GY transistor

AP2530GY Transistor Specification

Transistor Code AP2530GY
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SOT26
Transistor SMD Code Y1SS
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.072Ohm
Power Dissipation (Maximum) PD 1.14W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 3V

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