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2N6762JAN MOSFET Transistor

The 2N6762JAN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2N6762JAN transistor as follows.

Circuit diagram symbol of the 2N6762JAN transistor

2N6762JAN Transistor Specification

Transistor Code 2N6762JAN
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 50V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 30nC

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