PBSS8110D NPN Transistor

The PBSS8110D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS8110D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS8110D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS8110D transistor as follows.

PBSS8110D Transistor Specification

Transistor Code		PBSS8110D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT457 SC74
Transistor SMD Code		A8
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	100MHz
Collector Capacitance	CC	7.5pF

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