PBSS303ND NPN Transistor

The PBSS303ND is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS303ND transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS303ND transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS303ND transistor as follows.

PBSS303ND Transistor Specification

Transistor Code		PBSS303ND
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT457 SC74
Transistor SMD Code		AE
Collector Power Dissipation (Maximum)	PC	2.5W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		345
Transition Frequency	FT	140MHz
Collector Capacitance	CC	33pF

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