PBSS4160DS NPN Transistor

The PBSS4160DS is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS4160DS transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS4160DS transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS4160DS transistor as follows.

PBSS4160DS Transistor Specification

Transistor Code		PBSS4160DS
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT457 SC74
Transistor SMD Code		B8
Collector Power Dissipation (Maximum)	PC	0.7W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		250
Transition Frequency	FT	150MHz
Collector Capacitance	CC	10pF

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