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MJD44H11T4G NPN Transistor

The MJD44H11T4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD44H11T4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD44H11T4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD44H11T4G transistor as follows.

Circuit diagram symbol of the MJD44H11T4G transistor

MJD44H11T4G Transistor Specification

Transistor Code MJD44H11T4G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-252
Transistor SMD Code J44H11G
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 85MHz
Collector Capacitance CC 45pF

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