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MJD41CT4G NPN Transistor

The MJD41CT4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD41CT4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD41CT4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD41CT4G transistor as follows.

Circuit diagram symbol of the MJD41CT4G transistor

MJD41CT4G Transistor Specification

Transistor Code MJD41CT4G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-252
Transistor SMD Code J41CG
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 3MHz

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