MJD3055T4G NPN Transistor

The MJD3055T4G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJD3055T4G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD3055T4G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJD3055T4G transistor as follows.

MJD3055T4G Transistor Specification

Transistor Code		MJD3055T4G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-252
Transistor SMD Code		J3055G
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	70V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	2MHz

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