MJD117T4G PNP Transistor

The MJD117T4G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJD117T4G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD117T4G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJD117T4G transistor as follows.

MJD117T4G Transistor Specification

Transistor Code		MJD117T4G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-252
Transistor SMD Code		J117G
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		1000
Transition Frequency	FT	25MHz
Collector Capacitance	CC	200pF

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