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MJD210G PNP Transistor

The MJD210G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJD210G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJD210G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJD210G transistor as follows.

Circuit diagram symbol of the MJD210G transistor

MJD210G Transistor Specification

Transistor Code MJD210G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO-252
Transistor SMD Code J210G
Collector Power Dissipation (Maximum) PC 12.5W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 45
Transition Frequency FT 65MHz
Collector Capacitance CC 120pF

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