BTD6055J3 NPN Transistor

The BTD6055J3 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BTD6055J3 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BTD6055J3 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BTD6055J3 transistor as follows.

BTD6055J3 Transistor Specification

Transistor Code		BTD6055J3
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-252
Collector Power Dissipation (Maximum)	PC	15W
Collector-Base Voltage (Maximum)	VCB	15V
Collector-Emitter Voltage (Maximum)	VCE	10V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		250
Transition Frequency	FT	100MHz
Collector Capacitance	CC	50pF

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