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HTIP112 NPN Transistor

The HTIP112 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HTIP112 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HTIP112 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HTIP112 transistor as follows.

Circuit diagram symbol of the HTIP112 transistor

HTIP112 Transistor Specification

Transistor Code HTIP112
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-220AB
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 1000
Collector Capacitance CC 200pF

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More Transistors Datasheets in TO-220AB Package

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