HMJE13009A NPN Transistor

The HMJE13009A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HMJE13009A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HMJE13009A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HMJE13009A transistor as follows.

HMJE13009A Transistor Specification

Transistor Code		HMJE13009A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-220AB
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	700V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		13
Transition Frequency	FT	4MHz
Collector Capacitance	CC	180pF

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