HMJE3055T NPN Transistor

The HMJE3055T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HMJE3055T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HMJE3055T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HMJE3055T transistor as follows.

HMJE3055T Transistor Specification

Transistor Code		HMJE3055T
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-220AB
Collector Power Dissipation (Maximum)	PC	75W
Collector-Base Voltage (Maximum)	VCB	70V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	2MHz

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