HLB124E NPN Transistor

The HLB124E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HLB124E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HLB124E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HLB124E transistor as follows.

HLB124E Transistor Specification

Transistor Code		HLB124E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-220AB
Collector Power Dissipation (Maximum)	PC	35W
Collector-Base Voltage (Maximum)	VCB	600V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	15MHz

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