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VWI35-06P1 IGBT Transistor

The VWI35-06P1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VWI35-06P1 transistor as follows.

Circuit diagram symbol of the VWI35-06P1 transistor

VWI35-06P1 Transistor Specification

Transistor Code VWI35-06P1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ECO-PAC_2
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 31A

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