VWI35-06P1 IGBT Transistor

The VWI35-06P1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VWI35-06P1 transistor as follows.

VWI35-06P1 Transistor Specification

Transistor Code		VWI35-06P1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ECO-PAC_2
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	31A

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