STGWT40H65DFB IGBT Transistor

The STGWT40H65DFB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT40H65DFB transistor as follows.

STGWT40H65DFB Transistor Specification

Transistor Code		STGWT40H65DFB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	283W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		198
Rise Time		13

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