SME6G25US120 IGBT Transistor

The SME6G25US120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SME6G25US120 transistor as follows.

SME6G25US120 Transistor Specification

Transistor Code		SME6G25US120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		17PM-CA
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		150

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