SMBL1G200US120 IGBT Transistor

The SMBL1G200US120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SMBL1G200US120 transistor as follows.

SMBL1G200US120 Transistor Specification

Transistor Code		SMBL1G200US120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7PM-EA
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		150

UXPython is not the creator or an official representative of the SMBL1G200US120 IGBT transistor. You can download the official SMBL1G200US120 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXGA48N60A3 IGBT Transistor APTGS75X170TE3 IGBT Transistor IGC114T170S8RH IGBT Transistor GT60M101 IGBT Transistor IRG4MC40U IGBT Transistor IXEN60N120D1 IGBT Transistor RCM10N40A IGBT Transistor STGW39NC60VD IGBT Transistor MMG100J060U IGBT Transistor STGB15H60DF IGBT Transistor APT40GF120JRD IGBT Transistor IXGK80N60AU1 IGBT Transistor IXGA24N120C3 IGBT Transistor SKM145GB174DN IGBT Transistor SGP15N60 IGBT Transistor AUIRG4BC30S-S IGBT Transistor STGP30NC60S IGBT Transistor APTGT75SK170D1 IGBT Transistor APT30GP60BDQ1G IGBT Transistor IGC18T120T8L IGBT Transistor