SKM195GB063DN IGBT Transistor

The SKM195GB063DN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM195GB063DN transistor as follows.

SKM195GB063DN Transistor Specification

Transistor Code		SKM195GB063DN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	830W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	195A
Operating Junction Temperature (Maximum)		150 oC

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